SI3459BDV-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI3459BDV-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI3459BDV-T1-E3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 6-TSOP | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 216mOhm @ 2.2A, 10V | |
| Power Dissipation (Max) | 3.3W (Tc) | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 30 V | |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.9A (Tc) | |
| Basis Produktnummer | SI3459 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI3459BDV-T1-E3.
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| Part Number | SI3459BDV-T1-E3 | SI3459BDV-T1-GE3 | SI3458BDV-T1-GE3 | SI3458DV-T1-E3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | 6-TSOP | 6-TSOP | 6-TSOP | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
| Basis Produktnummer | SI3459 | SI3459 | SI3458 | SI3458 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| FET Feature | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.9A (Tc) | 2.9A (Tc) | 4.1A (Tc) | 3.2A (Ta) |
| FET Typ | P-Channel | P-Channel | N-Channel | N-Channel |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 1V @ 250µA (Min) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Power Dissipation (Max) | 3.3W (Tc) | 2W (Ta), 3.3W (Tc) | 2W (Ta), 3.3W (Tc) | 2W (Ta) |
| Rds On (Max) @ Id, Vgs | 216mOhm @ 2.2A, 10V | 216mOhm @ 2.2A, 10V | 100mOhm @ 3.2A, 10V | 100mOhm @ 3.2A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 30 V | 350 pF @ 30 V | 350 pF @ 30 V | - |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | 12 nC @ 10 V | 11 nC @ 10 V | 16 nC @ 10 V |
Eroflueden SI3459BDV-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI3459BDV-T1-E3 - Vishay Siliconix.
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| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
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| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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