SI3451DV-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI3451DV-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI3451DV-T1-E3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
| Vgs (Max) | ±12V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 6-TSOP | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 2.6A, 4.5V | |
| Power Dissipation (Max) | 1.25W (Ta), 2.1W (Tc) | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.8A (Tc) | |
| Basis Produktnummer | SI3451 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI3451DV-T1-E3.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | SI3451DV-T1-E3 | SI3447DV | SI3453DV-T1-GE3 | SI3447CDV-T1-E3 |
| Hiersteller | Vishay Siliconix | Fairchild Semiconductor | Vishay Siliconix | Vishay Siliconix |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.8A (Tc) | 5.5A (Ta) | 3.4A (Tc) | 7.8A (Tc) |
| Supplier Device Package | 6-TSOP | SuperSOT™-6 | 6-TSOP | 6-TSOP |
| Basis Produktnummer | SI3451 | - | SI3453 | SI3447 |
| Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 30 V | 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 10 V | 1926 pF @ 10 V | 155 pF @ 15 V | 910 pF @ 6 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 5 V | 30 nC @ 4.5 V | 6.8 nC @ 10 V | 30 nC @ 8 V |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | 1.5V @ 250µA | 2.5V @ 250µA | 1V @ 250µA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Power Dissipation (Max) | 1.25W (Ta), 2.1W (Tc) | 800mW (Ta) | 3W (Tc) | 2W (Ta), 3W (Tc) |
| Serie | TrenchFET® | PowerTrench® | - | TrenchFET® |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
| Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Vgs (Max) | ±12V | ±8V | ±20V | ±8V |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 2.6A, 4.5V | 33mOhm @ 5.5A, 4.5V | 165mOhm @ 2.5A, 10V | 36mOhm @ 6.3A, 4.5V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 1.8V, 4.5V | 4.5V, 10V | 4.5V |
| FET Feature | - | - | - | - |
Eroflueden SI3451DV-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI3451DV-T1-E3 - Vishay Siliconix.
SI3447DVFairchild SemiconductorP-CHANNEL MOSFET
SI3452C-B02-GMSkyworks Solutions Inc.IC POE CNTRL 4 CHANNEL 40QFNSi3447DV-NLFairchild (onsemi)SI3453DV-T1-GE3Vishay SiliconixMOSFET P-CHANNEL 30V 3.4A 6TSOP
SI3447DV-T1Electro-Films (EFI) / VishaySI3447CDV-T1-E3Vishay SiliconixMOSFET P-CH 12V 7.8A 6TSOPSI3452A-B01-IMSkyworks Solutions Inc.IC POE CNTRL 4 CHANNEL 40QFNSI3452B-B02-GMRSkyworks Solutions Inc.IC POE CNTRL 4 CHANNEL 40QFNSi3447CDV-T1-GE3 MOSElectro-Films (EFI) / VishaySI3447DV-T1-E3Electro-Films (EFI) / VishaySI3448DV-T1-E3Electro-Films (EFI) / VishaySI3452D-B02-GMSkyworks Solutions Inc.IC POE CNTRL 4 CHANNEL 40QFNSI3452DV-T1-E3Electro-Films (EFI) / VishaySI3452A-B01-GMSkyworks Solutions Inc.IC POE CNTRL 4 CHANNEL 40QFNSI3452-B02-GMSkyworks Solutions Inc.IC POE CNTRL 4 CHANNEL 40QFNSI3451DV-T1-GE3Vishay SiliconixMOSFET P-CH 20V 2.8A 6TSOPSI3447CDV-T1-GE3Vishay SiliconixMOSFET P-CH 12V 7.8A 6TSOPSI3447DV-T1-GE3Electro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.