SI2347DS-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI2347DS-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI2347DS-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 3.8A, 10V | |
| Power Dissipation (Max) | 1.7W (Tc) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 705 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | |
| Basis Produktnummer | SI2347 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI2347DS-T1-GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SI2347DS-T1-GE3 | SI2351DS-T1-GE3 | SI2347DS-T1-BE3 | SI2343DS-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Serie | TrenchFET® | - | - | TrenchFET® |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Basis Produktnummer | SI2347 | SI2351 | - | SI2343 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Vgs (Max) | ±20V | - | ±20V | ±20V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 1.7W (Tc) | - | 1.2W (Ta), 1.7W (Tc) | 750mW (Ta) |
| Package protegéieren | Tape & Reel (TR) | Cut Tape (CT) | Tape & Reel (TR) | Tape & Reel (TR) |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | - | 4.5V, 10V | 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | 2.8A (Tc) | 3.8A (Ta), 5A (Tc) | 3.1A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 705 pF @ 15 V | 250 pF @ 10 V | 705 pF @ 15 V | 540 pF @ 15 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Supplier Device Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 3.8A, 10V | 115mOhm @ 2.4A, 4.5V | 42mOhm @ 3.8A, 10V | 53mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | 5.1 nC @ 5 V | 22 nC @ 10 V | 21 nC @ 10 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | 1.5V @ 250µA | 2.5V @ 250µA | 3V @ 250µA |
| Entworf fir Source Voltage (Vdss) | 30 V | 20 V | 30 V | 30 V |
Eroflueden SI2347DS-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI2347DS-T1-GE3 - Vishay Siliconix.
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|---|---|---|
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| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
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| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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