SI2333DS-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI2333DS-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI2333DS-T1-E3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 5.3A, 4.5V | |
| Power Dissipation (Max) | 750mW (Ta) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 6 V | |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 12 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.1A (Ta) | |
| Basis Produktnummer | SI2333 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI2333DS-T1-E3.
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|---|---|---|---|---|
| Part Number | SI2333DS-T1-E3 | SI2334DS-T1-GE3 | SI2335DS-T1-E3 | SI2333DDS-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Entworf fir Source Voltage (Vdss) | 12 V | 30 V | 12 V | 12 V |
| Supplier Device Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V | 10 nC @ 4.5 V | 15 nC @ 4.5 V | 35 nC @ 8 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (Max) | ±8V | ±8V | ±8V | ±8V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 5.3A, 4.5V | 44mOhm @ 4.2A, 4.5V | 51mOhm @ 4A, 4.5V | 28mOhm @ 5A, 4.5V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.1A (Ta) | 4.9A (Tc) | 3.2A (Ta) | 6A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 6 V | 634 pF @ 15 V | 1225 pF @ 6 V | 1275 pF @ 6 V |
| Power Dissipation (Max) | 750mW (Ta) | 1.3W (Ta), 1.7W (Tc) | 750mW (Ta) | 1.2W (Ta), 1.7W (Tc) |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 450mV @ 250µA (Min) | 1V @ 250µA |
| Basis Produktnummer | SI2333 | SI2334 | SI2335 | SI2333 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| FET Typ | P-Channel | N-Channel | P-Channel | P-Channel |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 2.5V, 4.5V | 1.8V, 4.5V | 1.5V, 4.5V |
| FET Feature | - | - | - | - |
Eroflueden SI2333DS-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI2333DS-T1-E3 - Vishay Siliconix.
SI2333DS-T1-GE3 MOSElectro-Films (EFI) / VishaySI2333DDSVishaySI2334DS-T1-GE3Vishay SiliconixMOSFET N-CH 30V 4.9A SOT23-3SI2335DS-T1-E3Vishay SiliconixMOSFET P-CH 12V 3.2A SOT23-3SI2336DSVishaySI2333DDS-T1-GE3Vishay SiliconixMOSFET P-CH 12V 6A SOT23-3SI2333DDS-T1VishaySi2333DDST1-GE3Electro-Films (EFI) / VishaySI2333DSElectro-Films (EFI) / VishaySI2333DS-T1Electro-Films (EFI) / VishaySI2335DSElectro-Films (EFI) / VishaySI2334DS-T1-E3Electro-Films (EFI) / VishaySI2335DS-T1Electro-Films (EFI) / VishaySI2333CDS-T1-GE3 MOSElectro-Films (EFI) / VishaySI2333DDS-T1-E3Electro-Films (EFI) / VishaySI2333DS-T1-GE3Vishay SiliconixMOSFET P-CH 12V 4.1A SOT23-3SI2333CDS-TI-GE3Electro-Films (EFI) / VishaySI2335DS-T1-GE3Vishay SiliconixMOSFET P-CH 12V 3.2A SOT23-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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