SI2308BDS-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI2308BDS-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI2308BDS-T1-E3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 1.9A, 10V | |
| Power Dissipation (Max) | 1.09W (Ta), 1.66W (Tc) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 30 V | |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.3A (Tc) | |
| Basis Produktnummer | SI2308 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI2308BDS-T1-E3.
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|---|---|---|---|---|
| Part Number | SI2308BDS-T1-E3 | SI2308CDS-T1-GE3 | SI2308BDS-T1-GE3 | SI2308DS-T1-E3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 1.9A, 10V | 144mOhm @ 1.9A, 10V | 156mOhm @ 1.9A, 10V | 160mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V | 4 nC @ 10 V | 6.8 nC @ 10 V | 10 nC @ 10 V |
| Serie | TrenchFET® | TrenchFET® Gen IV | TrenchFET® | TrenchFET® |
| Power Dissipation (Max) | 1.09W (Ta), 1.66W (Tc) | 1.6W (Tc) | 1.09W (Ta), 1.66W (Tc) | 1.25W (Ta) |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.3A (Tc) | 2.6A (Tc) | 2.3A (Tc) | 2A (Ta) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Feature | - | - | - | - |
| Basis Produktnummer | SI2308 | SI2308 | SI2308 | SI2308 |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 30 V | 105 pF @ 30 V | 190 pF @ 30 V | 240 pF @ 25 V |
| Supplier Device Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
Eroflueden SI2308BDS-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI2308BDS-T1-E3 - Vishay Siliconix.
SI2307DSSIPUSEMISI2308CDS-T1-GE3Vishay SiliconixMOSFET N-CH 60V 2.6A SOT23-3SI2308DSSIPUSEMI
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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