SI2301BDS-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI2301BDS-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI2301BDS-T1-E3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 950mV @ 250µA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.8A, 4.5V | |
| Power Dissipation (Max) | 700mW (Ta) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 375 pF @ 6 V | |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.2A (Ta) | |
| Basis Produktnummer | SI2301 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI2301BDS-T1-E3.
| Produktiounsattriff |  |
|
 |
 |
|---|---|---|---|---|
| Part Number | SI2301BDS-T1-E3 | SI2301CDS-T1-GE3 | SI2301A | SI2301-TP |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | UMW | Micro Commercial Co |
| Serie | TrenchFET® | TrenchFET® | UMW | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | 10 nC @ 4.5 V | 10 nC @ 4.5 V | 14.5 nC @ 4.5 V |
| Vgs (Max) | ±8V | ±8V | ±12V | ±8V |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 375 pF @ 6 V | 405 pF @ 10 V | 405 pF @ 10 V | 880 pF @ 6 V |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Vgs (th) (Max) @ Id | 950mV @ 250µA | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23 | SOT-23 |
| Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Basis Produktnummer | SI2301 | SI2301 | - | SI2301 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.2A (Ta) | 3.1A (Tc) | 2.8A (Ta) | 2.8A (Ta) |
| Power Dissipation (Max) | 700mW (Ta) | 860mW (Ta), 1.6W (Tc) | 400mW (Ta) | 1.25W (Ta) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.8A, 4.5V | 112mOhm @ 2.8A, 4.5V | 85mOhm @ 2.8A, 4.5V | 120mOhm @ 2.8A, 4.5V |
Eroflueden SI2301BDS-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI2301BDS-T1-E3 - Vishay Siliconix.
SI2301CDS-T1-GE3Vishay SiliconixMOSFET P-CH 20V 3.1A SOT23-3
SI2301BDS-T1Electro-Films (EFI) / VishaySI2301/NP2301LNSI2301AUMW20V 2.8A 400MW 142MR@2.5V,2A 1V@SI2301-TPMicro Commercial CoMOSFET P-CH 20V 2.8A SOT-23SI2301ADS-T1-E3Electro-Films (EFI) / VishaySI2301BDS-T1-GE3Vishay SiliconixMOSFET P-CH 20V 2.2A SOT23-3SI2301BDSSIPUSEMISI2301A-TPMicro Commercial CoMOSFET P-CH 20V 2.8A SOT23SI2301BDS-T1-ESElectro-Films (EFI) / VishaySI2301CDS-T1Electro-Films (EFI) / VishaySI2301CDS-T1-E3Vishay SiliconixMOSFET P-CH 20V 3.1A SOT23-3SI2301DSSIPUSEMISI2301CDSElectro-Films (EFI) / VishaySI2301ADS-T1-GE3Electro-Films (EFI) / VishaySI2301CDS-T1-GE3 MOSElectro-Films (EFI) / VishaySI2301ADSElectro-Films (EFI) / VishaySI2301CDS-TI-GE3Electro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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