SI1926DL-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI1926DL-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI1926DL-T1-E3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SC-70-6 | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 340mA, 10V | |
| Power - Max | 510mW | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 18.5pF @ 30V | |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 10V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 60V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 370mA | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | SI1926 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
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|---|---|---|---|---|
| Part Number | SI1926DL-T1-E3 | SI1922EDH-T1-GE3 | SI1926DL-T1-BE3 | SI1922EDH-T1-BE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Input Capacitance (Ciss) (Max) @ Vds | 18.5pF @ 30V | - | 18.5pF @ 30V | - |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 10V | 2.5nC @ 8V | 1.4nC @ 10V | 2.5nC @ 8V |
| FET Feature | Logic Level Gate | Logic Level Gate | - | - |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 340mA, 10V | 198mOhm @ 1A, 4.5V | 1.4Ohm @ 340mA, 10V | 198mOhm @ 1A, 4.5V |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | 1V @ 250µA | 2.5V @ 250µA | 1V @ 250µA |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Power - Max | 510mW | 1.25W | 300mW (Ta), 510mW (Tc) | 740mW (Ta), 1.25W (Tc) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Basis Produktnummer | SI1926 | SI1922 | SI1926 | SI1922 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 370mA | 1.3A | 340mA (Ta), 370mA (Tc) | 1.3A (Ta), 1.3A (Tc) |
| Entworf fir Source Voltage (Vdss) | 60V | 20V | 60V | 20V |
| Supplier Device Package | SC-70-6 | SC-70-6 | SC-70-6 | SC-70-6 |
Eroflueden SI1926DL-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI1926DL-T1-E3 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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