SI1905DL-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI1905DL-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI1905DL-T1-E3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 450mV @ 250µA (Min) | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SC-70-6 | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 570mA, 4.5V | |
| Power - Max | 270mW | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 8V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 570mA | |
| Konfiguratioun | 2 P-Channel (Dual) | |
| Basis Produktnummer | SI1905 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI1905DL-T1-E3.
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|---|---|---|---|---|
| Part Number | SI1905DL-T1-E3 | SI1905BDH-T1-E3 | SI1903DL-T1-E3 | SI1903DL-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Konfiguratioun | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Basis Produktnummer | SI1905 | SI1905 | SI1903 | SI1903 |
| Supplier Device Package | SC-70-6 | SC-70-6 | SC-70-6 | SC-70-6 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | - | 62pF @ 4V | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 570mA, 4.5V | 542mOhm @ 580mA, 4.5V | 995mOhm @ 410mA, 4.5V | 995mOhm @ 410mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V | 1.5nC @ 4.5V | 1.8nC @ 4.5V | 1.8nC @ 4.5V |
| Vgs (th) (Max) @ Id | 450mV @ 250µA (Min) | 1V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 570mA | 630mA | 410mA | 410mA |
| Entworf fir Source Voltage (Vdss) | 8V | 8V | 20V | 20V |
| Power - Max | 270mW | 357mW | 270mW | 270mW |
Eroflueden SI1905DL-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI1905DL-T1-E3 - Vishay Siliconix.
SI1905BDH-T1-E3Vishay SiliconixMOSFET 2P-CH 8V 0.63A SC70-6
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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