SI1539DL-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI1539DL-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI1539DL-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2.6V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SC-70-6 | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 590mA, 10V | |
| Power - Max | 270mW | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 10V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 540mA, 420mA | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | SI1539 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI1539DL-T1-GE3.
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|---|---|---|---|---|
| Part Number | SI1539DL-T1-GE3 | SI1553DL-T1 | SI1553CDL-T1-GE3 | SI1553DL-T1-E3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Supplier Device Package | SC-70-6 | SC-70-6 | SC-70-6 | SC-70-6 |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 10V | 1.2nC @ 4.5V | 1.8nC @ 10V | 1.2nC @ 4.5V |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 590mA, 10V | 385mOhm @ 660mA, 4.5V | 390mOhm @ 700mA, 4.5V | 385mOhm @ 660mA, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | 38pF @ 10V | - |
| Power - Max | 270mW | 270mW | 340mW | 270mW |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Konfiguratioun | N and P-Channel | N and P-Channel | N and P-Channel | N and P-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 540mA, 420mA | 660mA, 410mA | 700mA, 500mA | 660mA, 410mA |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 |
| Vgs (th) (Max) @ Id | 2.6V @ 250µA | 600mV @ 250µA (Min) | 1.5V @ 250µA | 600mV @ 250µA (Min) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 30V | 20V | 20V | 20V |
| Basis Produktnummer | SI1539 | SI1553 | SI1553 | SI1553 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden SI1539DL-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI1539DL-T1-GE3 - Vishay Siliconix.
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SI1539CDL-T1-GE3Vishay SiliconixMOSFET N/P-CH 30V SOT363SI1539DL-T1-E3Vishay SiliconixMOSFET N/P-CH 30V SC70-6SI1539DL-T1Electro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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