SI1442DH-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI1442DH-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI1442DH-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SC-70-6 | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6A, 4.5V | |
| Power Dissipation (Max) | 1.56W (Ta), 2.8W (Tc) | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 6 V | |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 8 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 12 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Ta) | |
| Basis Produktnummer | SI1442 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI1442DH-T1-GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SI1442DH-T1-GE3 | SI1441EDH-T1-GE3 | SI1424EDH-T1-GE3 | SI1443EDH-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 12 V | 20 V | 20 V | 30 V |
| Vgs (Max) | ±8V | ±10V | ±8V | ±12V |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.8V, 4.5V | 4.5V | 10V |
| FET Feature | - | - | - | - |
| Supplier Device Package | SC-70-6 | SC-70-6 | SC-70-6 | SC-70-6 |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA | 1.5V @ 250µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Power Dissipation (Max) | 1.56W (Ta), 2.8W (Tc) | 2.8W (Tc) | 1.56W (Ta), 2.8W (Tc) | 1.6W (Ta), 2.8W (Tc) |
| Basis Produktnummer | SI1442 | SI1441 | SI1424 | SI1443 |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 6 V | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 8 V | 33 nC @ 8 V | 18 nC @ 8 V | 28 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6A, 4.5V | 41mOhm @ 5A, 4.5V | 33mOhm @ 5A, 4.5V | 54mOhm @ 4.3A, 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 |
| FET Typ | N-Channel | P-Channel | N-Channel | P-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Ta) | 4A (Tc) | 4A (Tc) | 4A (Tc) |
Eroflueden SI1442DH-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI1442DH-T1-GE3 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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