SI1072X-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI1072X-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI1072X-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SC-89 (SOT-563F) | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 93mOhm @ 1.3A, 10V | |
Power Dissipation (Max) | 236mW (Ta) | |
Package / Case | SOT-563, SOT-666 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.3A (Ta) | |
Basis Produktnummer | SI1072 |
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Produktiounsattriff | ||||
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Part Number | SI1072X-T1-GE3 | SI1073X-T1-GE3 | SI1062X-T1-GE3 | SI1070X-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V | 9.45 nC @ 10 V | 2.7 nC @ 8 V | 8.3 nC @ 5 V |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 1V @ 250µA | 1.55V @ 250µA |
Package / Case | SOT-563, SOT-666 | SOT-563, SOT-666 | SC-89, SOT-490 | SOT-563, SOT-666 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±20V | ±8V | ±12V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 1.5V, 4.5V | 2.5V, 4.5V |
Supplier Device Package | SC-89 (SOT-563F) | SC-89 (SOT-563F) | SC-89-3 | SC-89 (SOT-563F) |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 20 V | 30 V |
Basis Produktnummer | SI1072 | SI1073 | SI1062 | SI1070 |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.3A (Ta) | 980mA (Ta) | 530mA (Ta) | 1.2A (Ta) |
Power Dissipation (Max) | 236mW (Ta) | 236mW (Ta) | 220mW (Ta) | 236mW (Ta) |
FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 15 V | 265 pF @ 15 V | 43 pF @ 10 V | 385 pF @ 15 V |
Rds On (Max) @ Id, Vgs | 93mOhm @ 1.3A, 10V | 173mOhm @ 980mA, 10V | 420mOhm @ 500mA, 4.5V | 99mOhm @ 1.2A, 4.5V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
FET Feature | - | - | - | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden SI1072X-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI1072X-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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