SI1025X-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI1025X-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI1025X-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SC-89 (SOT-563F) | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 500mA, 10V | |
| Power - Max | 250mW | |
| Package / Case | SOT-563, SOT-666 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 23pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 1.7nC @ 15V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 60V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 190mA | |
| Konfiguratioun | 2 P-Channel (Dual) | |
| Basis Produktnummer | SI1025 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI1025X-T1-GE3.
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|---|---|---|---|---|
| Part Number | SI1025X-T1-GE3 | SI1023X-T1-GE3 | SI1028X-T1-GE3 | SI1029X-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Supplier Device Package | SC-89 (SOT-563F) | SC-89 (SOT-563F) | SC-89 (SOT-563F) | SC-89 (SOT-563F) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 500mA, 10V | 1.2Ohm @ 350mA, 4.5V | 650mOhm @ 500mA, 10V | 1.4Ohm @ 500mA, 10V |
| Konfiguratioun | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 N-Channel (Dual) | N and P-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 190mA | 370mA | - | 305mA, 190mA |
| Package / Case | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 |
| Basis Produktnummer | SI1025 | SI1023 | SI1028 | SI1029 |
| Power - Max | 250mW | 250mW | 220mW | 250mW |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 450mV @ 250µA (Min) | 2.5V @ 250µA | 2.5V @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Input Capacitance (Ciss) (Max) @ Vds | 23pF @ 25V | - | 16pF @ 15V | 30pF @ 25V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Entworf fir Source Voltage (Vdss) | 60V | 20V | 30V | 60V |
| Gate Charge (Qg) (Max) @ Vgs | 1.7nC @ 15V | 1.5nC @ 4.5V | 2nC @ 10V | 0.75nC @ 4.5V |
Eroflueden SI1025X-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI1025X-T1-GE3 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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