SI1012R-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI1012R-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI1012R-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 900mV @ 250µA | |
| Vgs (Max) | ±6V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SC-75A | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 600mA, 4.5V | |
| Power Dissipation (Max) | 150mW (Ta) | |
| Package / Case | SC-75, SOT-416 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Gate Charge (Qg) (Max) @ Vgs | 0.75 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 500mA (Ta) | |
| Basis Produktnummer | SI1012 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI1012R-T1-GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SI1012R-T1-GE3 | SI1012CR-T1-GE3 | SI1012R-T1-E3 | SI1013CX-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 500mA (Ta) | 630mA (Ta) | 500mA (Ta) | 450mA (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 0.75 nC @ 4.5 V | 2 nC @ 8 V | 0.75 nC @ 4.5 V | 2.5 nC @ 4.5 V |
| Basis Produktnummer | SI1012 | SI1012 | SI1012 | SI1013 |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 600mA, 4.5V | 396mOhm @ 600mA, 4.5V | 700mOhm @ 600mA, 4.5V | 760mOhm @ 400mA, 4.5V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (th) (Max) @ Id | 900mV @ 250µA | 1V @ 250µA | 900mV @ 250µA | 1V @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
| Package / Case | SC-75, SOT-416 | SC-75, SOT-416 | SC-75, SOT-416 | SC-89, SOT-490 |
| Supplier Device Package | SC-75A | SC-75A | SC-75A | SC-89-3 |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (Max) | ±6V | ±8V | ±6V | ±8V |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.5V, 4.5V | 1.8V, 4.5V | 4.5V |
| Power Dissipation (Max) | 150mW (Ta) | 240mW (Ta) | 150mW (Ta) | 190mW (Ta) |
Eroflueden SI1012R-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI1012R-T1-GE3 - Vishay Siliconix.
SI1012CR-T1-GE3Vishay SiliconixMOSFET N-CH 20V SC75A
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SI1004-E-GM2SiliconSI1012RVishaySI1012R-T1-E3Vishay SiliconixMOSFET N-CH 20V 500MA SC75ASI1013CX-T1-GE3Vishay SiliconixMOSFET P-CH 20V 450MA SC89-3
SI1010-C-GM2RSilicon LabsIC RF TXRX+MCU ISM<1GHZ 42VFLGASI1012CRVishay
SI1013-A-GMRSilicon LabsIC RF TXRX+MCU ISM<1GHZ 42WFQFNSI1012XSemitehelecSI1012X-T1-E3Vishay SiliconixMOSFET N-CH 20V 500MA SC89-3SI1013CS-T1-GE3Electro-Films (EFI) / VishaySI1012X-T1-GE3Vishay SiliconixMOSFET N-CH 20V 500MA SC89-3SI1012R-T1Electro-Films (EFI) / VishaySI1012-C-GM2Silicon LabsIC RF TXRX+MCU ISM<1GHZ 42VFLGASI1013R-T1Electro-Films (EFI) / VishaySI1012R-TI-GE3Electro-Films (EFI) / VishaySI1008VHIT| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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