SI1002R-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI1002R-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI1002R-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SC-75A | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 560mOhm @ 500mA, 4.5V | |
Power Dissipation (Max) | 220mW (Ta) | |
Package / Case | SC-75A | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 36 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 8 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 610mA (Ta) | |
Basis Produktnummer | SI1002 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI1002R-T1-GE3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SI1002R-T1-GE3 | SI1000-E-GM2R | SI1000-E-GM | SI1004-C-GM |
Hiersteller | Vishay Siliconix | Silicon Labs | Silicon Power | Silicon Labs |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | - | - | - |
Vgs (Max) | ±8V | - | - | - |
Serie | - | - | - | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -40°C ~ 85°C | - | -40°C ~ 85°C |
Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 8 V | - | - | - |
FET Typ | N-Channel | - | - | - |
Entworf fir Source Voltage (Vdss) | 30 V | - | - | - |
Vgs (th) (Max) @ Id | 1V @ 250µA | - | - | - |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 560mOhm @ 500mA, 4.5V | - | - | - |
Basis Produktnummer | SI1002 | SI1000 | - | SI1004 |
Mounting Type | Surface Mount | Surface Mount | - | Surface Mount |
Package / Case | SC-75A | 42-VFLGA Exposed Pad | - | 42-WFQFN Exposed Pad |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 610mA (Ta) | - | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | Tube |
Technologie | MOSFET (Metal Oxide) | - | - | - |
Power Dissipation (Max) | 220mW (Ta) | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 36 pF @ 15 V | - | - | - |
Supplier Device Package | SC-75A | 42-LGA (5x7) | - | 42-QFN (5x7) |
Eroflueden SI1002R-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI1002R-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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