IRLR120TR Tech Spezifikatioune
Vishay Siliconix - IRLR120TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRLR120TR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2V @ 250µA | |
Vgs (Max) | ±10V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D-Pak | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 270mOhm @ 4.6A, 5V | |
Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 5V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.7A (Tc) | |
Basis Produktnummer | IRLR120 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | RoHS net konform |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRLR120TR.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRLR120TR | IRLR120NTRR | IRLR130ATM | IRLR120NTRLPBF |
Hiersteller | Vishay Siliconix | Infineon Technologies | onsemi | Infineon Technologies |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 5V | 4V, 10V | 5V | 4V, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V | 440 pF @ 25 V | 755 pF @ 25 V | 440 pF @ 25 V |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.7A (Tc) | 10A (Tc) | 13A (Tc) | 10A (Tc) |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
Vgs (Max) | ±10V | ±16V | ±20V | ±16V |
Supplier Device Package | D-Pak | D-Pak | TO-252AA | D-Pak |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 270mOhm @ 4.6A, 5V | 185mOhm @ 6A, 10V | 120mOhm @ 6.5A, 5V | 185mOhm @ 6A, 10V |
Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) | 48W (Tc) | 2.5W (Ta), 46W (Tc) | 48W (Tc) |
Serie | - | HEXFET® | - | HEXFET® |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V | 20 nC @ 5 V | 24 nC @ 5 V | 20 nC @ 5 V |
Vgs (th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Basis Produktnummer | IRLR120 | - | IRLR13 | IRLR120 |
Eroflueden IRLR120TR PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRLR120TR - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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