IRLR024TRL Tech Spezifikatioune
Vishay Siliconix - IRLR024TRL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRLR024TRL
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2V @ 250µA | |
Vgs (Max) | ±10V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D-Pak | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 8.4A, 5V | |
Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 5V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Tc) | |
Basis Produktnummer | IRLR024 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRLR024TRL.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRLR024TRL | IRLR024NTRPBF | IRLR110 | IRLR024PBF |
Hiersteller | Vishay Siliconix | Infineon Technologies | Vishay Siliconix | Vishay Siliconix |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tube |
Supplier Device Package | D-Pak | D-Pak | D-Pak | D-Pak |
Entworf fir Source Voltage (Vdss) | 60 V | 55 V | 100 V | 60 V |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 5V | 4V, 10V | 4V, 5V | 4V, 5V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Serie | - | HEXFET® | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V | 480 pF @ 25 V | 250 pF @ 25 V | 870 pF @ 25 V |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA |
Basis Produktnummer | IRLR024 | IRLR024 | IRLR110 | IRLR024 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) | 45W (Tc) | 2.5W (Ta), 25W (Tc) | 42W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Tc) | 17A (Tc) | 4.3A (Tc) | 14A (Tc) |
Rds On (Max) @ Id, Vgs | 100mOhm @ 8.4A, 5V | 65mOhm @ 10A, 10V | 540mOhm @ 2.6A, 5V | 100mOhm @ 8.4A, 5V |
Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V | 15 nC @ 5 V | 6.1 nC @ 5 V | 18 nC @ 5 V |
Vgs (Max) | ±10V | ±16V | ±10V | ±10V |
Eroflueden IRLR024TRL PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRLR024TRL - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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