IRL620 Tech Spezifikatioune
Vishay Siliconix - IRL620 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRL620
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | ±10V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 3.1A, 5V | |
| Power Dissipation (Max) | 50W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 5V | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.2A (Tc) | |
| Basis Produktnummer | IRL620 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRL620.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRL620 | IRL620SPBF | IRL6283MTRPBF | IRL620STRL |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | International Rectifier | Vishay Siliconix |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Basis Produktnummer | IRL620 | IRL620 | - | IRL620 |
| Serie | - | - | HEXFET®, StrongIRFET™ | - |
| Vgs (Max) | ±10V | ±10V | ±12V | ±10V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V | 16 nC @ 5 V | 158 nC @ 4.5 V | 16 nC @ 5 V |
| Power Dissipation (Max) | 50W (Tc) | 3.1W (Ta), 50W (Tc) | 2.1W (Ta), 63W (Tc) | 3.1W (Ta), 50W (Tc) |
| Entworf fir Source Voltage (Vdss) | 200 V | 200 V | 20 V | 200 V |
| Supplier Device Package | TO-220AB | D²PAK (TO-263) | DIRECTFET™ MD | D²PAK (TO-263) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package / Case | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | DirectFET™ Isometric MD | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V | 360 pF @ 25 V | 8292 pF @ 10 V | 360 pF @ 25 V |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA | 1.1V @ 100µA | 2V @ 250µA |
| Package protegéieren | Tube | Tube | Bulk | Tape & Reel (TR) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 3.1A, 5V | 800mOhm @ 3.1A, 10V | 0.75mOhm @ 50A, 10V | 800mOhm @ 3.1A, 10V |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 5V | 4V, 10V | 2.5V, 4.5V | 4V, 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.2A (Tc) | 5.2A (Tc) | 38A (Ta), 211A (Tc) | 5.2A (Tc) |
Eroflueden IRL620 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRL620 - Vishay Siliconix.
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IRL610AonsemiMOSFET N-CH 200V 3.3A TO220-3IRL620PBFVishay SiliconixMOSFET N-CH 200V 5.2A TO220ABIRL620SVishay SiliconixMOSFET N-CH 200V 5.2A D2PAKIRL60B216International RectifierIRL60B216 - 12V-300V N-CHANNEL PIRL620STRLPBFVishay SiliconixMOSFET N-CH 200V 5.2A D2PAKIRL620S L620SIRIRL610A MOSFairchild (onsemi)
IRL60S216Infineon TechnologiesMOSFET N-CH 60V 195A D2PAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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