IRFU9014 Tech Spezifikatioune
Vishay Siliconix - IRFU9014 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFU9014
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-251AA | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 500mOhm @ 3.1A, 10V | |
Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.1A (Tc) | |
Basis Produktnummer | IRFU9 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFU9014.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFU9014 | IRFU9024N | IRFU5505PBF | IRFU5505 |
Hiersteller | Vishay Siliconix | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | 19 nC @ 10 V | 32 nC @ 10 V | 32 nC @ 10 V |
FET Feature | - | - | - | - |
Basis Produktnummer | IRFU9 | - | IRFU5505 | - |
Rds On (Max) @ Id, Vgs | 500mOhm @ 3.1A, 10V | 175mOhm @ 6.6A, 10V | 110mOhm @ 9.6A, 10V | 110mOhm @ 9.6A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V | 350 pF @ 25 V | 650 pF @ 25 V | 650 pF @ 25 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) | 38W (Tc) | 57W (Tc) | 57W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Package protegéieren | Tube | Tube | Tube | Tube |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.1A (Tc) | 11A (Tc) | 18A (Tc) | 18A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Entworf fir Source Voltage (Vdss) | 60 V | 55 V | 55 V | 55 V |
Supplier Device Package | TO-251AA | IPAK (TO-251AA) | IPAK (TO-251AA) | IPAK (TO-251AA) |
Serie | - | HEXFET® | HEXFET® | HEXFET® |
FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Eroflueden IRFU9014 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRFU9014 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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