IRFU120PBF Tech Spezifikatioune
Vishay Siliconix - IRFU120PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFU120PBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-251AA | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 270mOhm @ 4.6A, 10V | |
Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.7A (Tc) | |
Basis Produktnummer | IRFU120 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFU120PBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFU120PBF | IRFU13N20DPBF | IRFU1205 | IRFU120ATU |
Hiersteller | Vishay Siliconix | Infineon Technologies | Infineon Technologies | onsemi |
Vgs (th) (Max) @ Id | 4V @ 250µA | 5.5V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 100 V | 200 V | 55 V | 100 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) | 110W (Tc) | 107W (Tc) | 2.5W (Ta), 32W (Tc) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.7A (Tc) | 13A (Tc) | 44A (Tc) | 8.4A (Tc) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Basis Produktnummer | IRFU120 | - | - | IRFU1 |
Rds On (Max) @ Id, Vgs | 270mOhm @ 4.6A, 10V | 235mOhm @ 8A, 10V | 27mOhm @ 26A, 10V | 200mOhm @ 4.2A, 10V |
FET Feature | - | - | - | - |
Vgs (Max) | ±20V | ±30V | ±20V | ±20V |
Supplier Device Package | TO-251AA | IPAK (TO-251AA) | IPAK (TO-251AA) | I-PAK |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V | 38 nC @ 10 V | 65 nC @ 10 V | 22 nC @ 10 V |
Serie | - | HEXFET® | HEXFET® | - |
Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V | 830 pF @ 25 V | 1300 pF @ 25 V | 480 pF @ 25 V |
Eroflueden IRFU120PBF PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRFU120PBF - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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