IRFPF30 Tech Spezifikatioune
Vishay Siliconix - IRFPF30 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFPF30
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247AC | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 3.7Ohm @ 2.2A, 10V | |
Power Dissipation (Max) | 125W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 900 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.6A (Tc) | |
Basis Produktnummer | IRFPF30 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFPF30.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFPF30 | IRFPE50PBF | IRFPC60LCPBF | IRFPE50 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Entworf fir Source Voltage (Vdss) | 900 V | 800 V | 600 V | 800 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Power Dissipation (Max) | 125W (Tc) | 190W (Tc) | 280W (Tc) | 190W (Tc) |
Rds On (Max) @ Id, Vgs | 3.7Ohm @ 2.2A, 10V | 1.2Ohm @ 4.7A, 10V | 400mOhm @ 9.6A, 10V | 1.2Ohm @ 4.7A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V | 3100 pF @ 25 V | 3500 pF @ 25 V | 3100 pF @ 25 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V | 200 nC @ 10 V | 120 nC @ 10 V | 200 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±20V | ±30V | ±20V |
Basis Produktnummer | IRFPF30 | IRFPE50 | IRFPC60 | IRFPE50 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Supplier Device Package | TO-247AC | TO-247AC | TO-247AC | TO-247AC |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Serie | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.6A (Tc) | 7.8A (Tc) | 16A (Tc) | 7.8A (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden IRFPF30 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRFPF30 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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