IRFP350PBF Tech Spezifikatioune
Vishay Siliconix - IRFP350PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFP350PBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247AC | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 300mOhm @ 9.6A, 10V | |
Power Dissipation (Max) | 190W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 400 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Tc) | |
Basis Produktnummer | IRFP350 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFP350PBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFP350PBF | IRFP3703 | IRFP350 | IRFP3703PBF |
Hiersteller | Vishay Siliconix | Infineon Technologies | Vishay Siliconix | Infineon Technologies |
Rds On (Max) @ Id, Vgs | 300mOhm @ 9.6A, 10V | 2.8mOhm @ 76A, 10V | 300mOhm @ 9.6A, 10V | 2.8mOhm @ 76A, 10V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Basis Produktnummer | IRFP350 | - | IRFP350 | IRFP3703 |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Supplier Device Package | TO-247AC | TO-247AC | TO-247AC | TO-247AC |
Power Dissipation (Max) | 190W (Tc) | 3.8W (Ta), 230W (Tc) | 190W (Tc) | 3.8W (Ta), 230W (Tc) |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Tc) | 210A (Tc) | 16A (Tc) | 210A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V | 8250 pF @ 25 V | 2600 pF @ 25 V | 8250 pF @ 25 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Package protegéieren | Tube | Bag | Tube | Tube |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 7V, 10V | 10V | 7V, 10V |
Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V | 209 nC @ 10 V | 150 nC @ 10 V | 209 nC @ 10 V |
Entworf fir Source Voltage (Vdss) | 400 V | 30 V | 400 V | 30 V |
Serie | - | HEXFET® | - | HEXFET® |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Eroflueden IRFP350PBF PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRFP350PBF - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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