IRFL110 Tech Spezifikatioune
Vishay Siliconix - IRFL110 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFL110
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-223 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 900mA, 10V | |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) | |
| Package / Case | TO-261-4, TO-261AA | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.5A (Tc) | |
| Basis Produktnummer | IRFL110 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | RoHS net konform |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFL110.
| Produktiounsattriff |  |
|
|
|
|---|---|---|---|---|
| Part Number | IRFL110 | IRFL024ZPBF | IRFL110TRPBF | IRFL110TR |
| Hiersteller | Vishay Siliconix | Infineon Technologies | Vishay Siliconix | Vishay Siliconix |
| Package protegéieren | Tube | Tube | Tape & Reel (TR) | Tape & Reel (TR) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Supplier Device Package | SOT-223 | SOT-223 | SOT-223 | SOT-223 |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V | 340 pF @ 25 V | 180 pF @ 25 V | 180 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V | 14 nC @ 10 V | 8.3 nC @ 10 V | 8.3 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 900mA, 10V | 57.5mOhm @ 3.1A, 10V | 540mOhm @ 900mA, 10V | 540mOhm @ 900mA, 10V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Entworf fir Source Voltage (Vdss) | 100 V | 55 V | 100 V | 100 V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| FET Feature | - | - | - | - |
| Basis Produktnummer | IRFL110 | - | IRFL110 | IRFL110 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.5A (Tc) | 5.1A (Ta) | 1.5A (Tc) | 1.5A (Tc) |
| Serie | - | HEXFET® | - | - |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) | 1W (Ta) | 2W (Ta), 3.1W (Tc) | 2W (Ta), 3.1W (Tc) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Eroflueden IRFL110 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRFL110 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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