IRFI9620GPBF Tech Spezifikatioune
Vishay Siliconix - IRFI9620GPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFI9620GPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.8A, 10V | |
Power Dissipation (Max) | 30W (Tc) | |
Package / Case | TO-220-3 Full Pack, Isolated Tab | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Tc) | |
Basis Produktnummer | IRFI9620 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFI9620GPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFI9620GPBF | IRFI9630GPBF | IRFI9530GPBF | IRFI9640GPBF |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Basis Produktnummer | IRFI9620 | IRFI9630 | IRFI9530 | IRFI9640 |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | 29 nC @ 10 V | 38 nC @ 10 V | 44 nC @ 10 V |
FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Power Dissipation (Max) | 30W (Tc) | 35W (Tc) | 42W (Tc) | 40W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Tc) | 4.3A (Tc) | 7.7A (Tc) | 6.1A (Tc) |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Serie | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 200 V | 200 V | 100 V | 200 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.8A, 10V | 800mOhm @ 2.6A, 10V | 300mOhm @ 4.6A, 10V | 500mOhm @ 3.7A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 15 V | 700 pF @ 25 V | 860 pF @ 25 V | 1200 pF @ 25 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Package / Case | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
Eroflueden IRFI9620GPBF PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRFI9620GPBF - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.