IRFI644G Tech Spezifikatioune
Vishay Siliconix - IRFI644G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFI644G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.7A, 10V | |
| Power Dissipation (Max) | 40W (Tc) | |
| Package / Case | TO-220-3 Full Pack, Isolated Tab | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 250 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.9A (Tc) | |
| Basis Produktnummer | IRFI644 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFI644G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRFI644G | IRFI720GPBF | IRFI730GPBF | IRFI730G |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Entworf fir Source Voltage (Vdss) | 250 V | 400 V | 400 V | 400 V |
| Package / Case | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
| Package protegéieren | Tube | Tube | Tube | Tube |
| FET Feature | - | - | - | - |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V | 20 nC @ 10 V | 38 nC @ 10 V | 38 nC @ 10 V |
| Serie | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.7A, 10V | 1.8Ohm @ 1.6A, 10V | 1Ohm @ 2.1A, 10V | 1Ohm @ 2.1A, 10V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Power Dissipation (Max) | 40W (Tc) | 30W (Tc) | 35W (Tc) | 35W (Tc) |
| Basis Produktnummer | IRFI644 | IRFI720 | IRFI730 | IRFI730 |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V | 410 pF @ 25 V | 700 pF @ 25 V | 700 pF @ 25 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.9A (Tc) | 2.6A (Tc) | 3.7A (Tc) | 3.7A (Tc) |
Eroflueden IRFI644G PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRFI644G - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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