IRFI620GPBF Tech Spezifikatioune
Vishay Siliconix - IRFI620GPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFI620GPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.5A, 10V | |
| Power Dissipation (Max) | 30W (Tc) | |
| Package / Case | TO-220-3 Full Pack, Isolated Tab | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.1A (Tc) | |
| Basis Produktnummer | IRFI620 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFI620GPBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRFI620GPBF | IRFI624GPBF | IRFI614GPBF | IRFI540NPBF |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Infineon Technologies |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Basis Produktnummer | IRFI620 | IRFI624 | IRFI614 | IRFI540 |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Serie | - | - | - | HEXFET® |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220AB Full-Pak |
| Power Dissipation (Max) | 30W (Tc) | 30W (Tc) | 23W (Tc) | 54W (Tc) |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.5A, 10V | 1.1Ohm @ 2A, 10V | 2Ohm @ 1.3A, 10V | 52mOhm @ 11A, 10V |
| Package / Case | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V | 14 nC @ 10 V | 8.2 nC @ 10 V | 94 nC @ 10 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V | 260 pF @ 25 V | 140 pF @ 25 V | 1400 pF @ 25 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.1A (Tc) | 3.4A (Tc) | 2.1A (Tc) | 20A (Tc) |
| Entworf fir Source Voltage (Vdss) | 200 V | 250 V | 250 V | 100 V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Eroflueden IRFI620GPBF PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRFI620GPBF - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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