IRF9510SPBF Tech Spezifikatioune
Vishay Siliconix - IRF9510SPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRF9510SPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.4A, 10V | |
Power Dissipation (Max) | 43W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tube | |
Operatioun Temperatur | -55°C ~ 175°C (TJ) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | |
Basis Produktnummer | IRF9510 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRF9510SPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF9510SPBF | IRF9510STRLPBF | IRF9510 | IRF9510STRR |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V | 8.7 nC @ 10 V | 8.7 nC @ 10 V | 8.7 nC @ 10 V |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V | 200 pF @ 25 V | 200 pF @ 25 V | 200 pF @ 25 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.4A, 10V | 1.2Ohm @ 2.4A, 10V | 1.2Ohm @ 2.4A, 10V | 1.2Ohm @ 2.4A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tube | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | 4A (Tc) | 4A (Tc) | 4A (Tc) |
Power Dissipation (Max) | 43W (Tc) | 3.7W (Ta), 43W (Tc) | 43W (Tc) | 3.7W (Ta), 43W (Tc) |
Serie | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
Basis Produktnummer | IRF9510 | IRF9510 | IRF9510 | IRF9510 |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Eroflueden IRF9510SPBF PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRF9510SPBF - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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