IRF737LC Tech Spezifikatioune
Vishay Siliconix - IRF737LC technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRF737LC
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 3.7A, 10V | |
| Power Dissipation (Max) | 74W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 300 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.1A (Tc) | |
| Basis Produktnummer | IRF737 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | RoHS net konform |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRF737LC.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | IRF737LC | IRF737LCPBF | IRF737LCS | IRF7379TR MOS |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | IR |
| Supplier Device Package | TO-220AB | TO-220AB | D²PAK (TO-263) | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.1A (Tc) | 6.1A (Tc) | 6.1A (Tc) | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | - |
| Basis Produktnummer | IRF737 | IRF737 | IRF737 | - |
| Entworf fir Source Voltage (Vdss) | 300 V | 300 V | 300 V | - |
| Package protegéieren | Tube | Tube | Tube | - |
| Package / Case | TO-220-3 | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - |
| FET Feature | - | - | - | - |
| Serie | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| Vgs (Max) | ±30V | ±30V | ±30V | - |
| Mounting Type | Through Hole | Through Hole | Surface Mount | - |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | 17 nC @ 10 V | 17 nC @ 10 V | - |
| Power Dissipation (Max) | 74W (Tc) | 74W (Tc) | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V | 430 pF @ 25 V | 430 pF @ 25 V | - |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 3.7A, 10V | 750mOhm @ 3.7A, 10V | 750mOhm @ 3.7A, 10V | - |
Eroflueden IRF737LC PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRF737LC - Vishay Siliconix.
IRF7379TR MOSIR
IRF7380PBFInfineon TechnologiesMOSFET 2N-CH 80V 3.6A 8-SOICIRF7380QIRIRF7380IRIRF7379TRInfineon TechnologiesMOSFET N/P-CH 30V 8-SOICIRF7379TRPBF MOSIRIRF737LCPBFVishay SiliconixMOSFET N-CH 300V 6.1A TO220ABIRF7380QTRPBFInfineon TechnologiesMOSFET 2N-CH 80V 3.6A 8-SOICIRF7380TRIRIRF7379QTRPBFInfineon TechnologiesMOSFET N/P-CH 30V 8-SOICIRF7379TRPBF.IRIRF7380TRHRIRIRF737LCSVishay SiliconixMOSFET N-CH 300V 6.1A D2PAKIRF7379TRPBFInfineon TechnologiesMOSFET N/P-CH 30V 8-SOICIRF7379PBFInfineon TechnologiesMOSFET N/P-CH 30V 8-SOICIRF7380 MOSIRIRF7379QIRIRF7379QTRPBF.IR| Allgemeng Länner Login logistesch Zäit Referenz | ||
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| Brasilien | 7 | |
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| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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