IRF730AS Tech Spezifikatioune
Vishay Siliconix - IRF730AS technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRF730AS
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D²PAK (TO-263) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 1Ohm @ 3.3A, 10V | |
Power Dissipation (Max) | 74W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 400 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.5A (Tc) | |
Basis Produktnummer | IRF730 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRF730AS.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF730AS | IRF730S | IRF730BPBF | IRF730B |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Fairchild Semiconductor |
Package protegéieren | Tube | Tube | Tube | Bulk |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | 38 nC @ 10 V | 18 nC @ 10 V | 33 nC @ 10 V |
Serie | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 400 V | 400 V | 400 V | 400 V |
Basis Produktnummer | IRF730 | IRF730 | IRF730 | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA |
Vgs (Max) | ±30V | ±20V | ±30V | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V | 700 pF @ 25 V | 311 pF @ 100 V | 1000 pF @ 25 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | TO-220-3 |
Supplier Device Package | D²PAK (TO-263) | D²PAK (TO-263) | TO-220AB | TO-220 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.5A (Tc) | 5.5A (Tc) | 6A (Tc) | 5.5A (Tc) |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Through Hole |
Rds On (Max) @ Id, Vgs | 1Ohm @ 3.3A, 10V | 1Ohm @ 3.3A, 10V | 1Ohm @ 3A, 10V | 1Ohm @ 2.75A, 10V |
Power Dissipation (Max) | 74W (Tc) | 3.1W (Ta), 74W (Tc) | 104W (Tc) | 73W (Tc) |
Eroflueden IRF730AS PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRF730AS - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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