VS-HFA08PB120-N3 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - VS-HFA08PB120-N3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - VS-HFA08PB120-N3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 3.3 V @ 8 A | |
Voltage - DC Reverse (Vr) (Max) | 1200 V | |
Technologie | Standard | |
Supplier Device Package | TO-247AC Modified | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | HEXFRED® | |
Reverse Recovery Time (trr) | 95 ns |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | TO-247-2 | |
Package protegéieren | Tube | |
Operatiounstemperatur - Junction | -55°C ~ 150°C | |
Mounting Type | Through Hole | |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 1200 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 8A | |
Capacitance @ Vr, F. | - | |
Basis Produktnummer | HFA08 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division VS-HFA08PB120-N3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | VS-HFA08PB120-N3 | VS-HFA08TB60PBF | VS-HFA08SD60STR-M3 | VS-HFA08TB120-M3 |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
Voltage - Viru (Vf) (Max) @ Wann | 3.3 V @ 8 A | 1.7 V @ 8 A | 1.7 V @ 8 A | 4.3 V @ 12 A |
Serie | HEXFRED® | HEXFRED® | HEXFRED® | HEXFRED® |
Basis Produktnummer | HFA08 | HFA08 | HFA08 | HFA08 |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 1200 V | 5 µA @ 600 V | 5 µA @ 600 V | 10 µA @ 1200 V |
Technologie | Standard | Standard | Standard | Standard |
Mounting Type | Through Hole | Through Hole | Surface Mount | Through Hole |
Reverse Recovery Time (trr) | 95 ns | 55 ns | 55 ns | 95 ns |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 8A | 8A | 8A | 8A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Capacitance @ Vr, F. | - | - | - | - |
Package protegéieren | Tube | Tube | Tape & Reel (TR) | Tube |
Package / Case | TO-247-2 | TO-220-2 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-2 |
Voltage - DC Reverse (Vr) (Max) | 1200 V | 600 V | 600 V | 1200 V |
Supplier Device Package | TO-247AC Modified | TO-220AC | D-PAK (TO-252AA) | TO-220AC |
Eroflueden VS-HFA08PB120-N3 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir VS-HFA08PB120-N3 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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