VS-FA40SA50LC Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - VS-FA40SA50LC technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - VS-FA40SA50LC
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-227 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 130mOhm @ 23A, 10V | |
Power Dissipation (Max) | 543W (Tc) | |
Package / Case | SOT-227-4, miniBLOC | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Chassis Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 420 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 40A (Tc) | |
Basis Produktnummer | FA40 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division VS-FA40SA50LC.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | VS-FA40SA50LC | VS-FB190SA10 | VS-FA72SA50LC | VS-FC420SA10 |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay |
FET Feature | - | - | - | - |
Package protegéieren | Bulk | Tube | Bulk | - |
Rds On (Max) @ Id, Vgs | 130mOhm @ 23A, 10V | 6.5mOhm @ 180A, 10V | 80mOhm @ 34A, 10V | - |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4.35V @ 250µA | 4V @ 250µA | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | - |
Basis Produktnummer | FA40 | FB190 | FA72 | - |
Serie | - | - | - | - |
Mounting Type | Chassis Mount | Chassis Mount | Chassis Mount | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Gate Charge (Qg) (Max) @ Vgs | 420 nC @ 10 V | 250 nC @ 10 V | 338 nC @ 10 V | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 40A (Tc) | 190A (Tj) | 72A (Tc) | - |
Package / Case | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | - |
Vgs (Max) | ±20V | ±20V | ±20V | - |
Power Dissipation (Max) | 543W (Tc) | 568W (Tc) | 1136W (Tc) | - |
Supplier Device Package | SOT-227 | SOT-227 | SOT-227 | - |
Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V | 10700 pF @ 25 V | 10000 pF @ 25 V | - |
FET Typ | N-Channel | N-Channel | N-Channel | - |
Entworf fir Source Voltage (Vdss) | 500 V | 100 V | 500 V | - |
Eroflueden VS-FA40SA50LC PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir VS-FA40SA50LC - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
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Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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