VS-8EWS16S-M3 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - VS-8EWS16S-M3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - VS-8EWS16S-M3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 8 A | |
Voltage - DC Reverse (Vr) (Max) | 1600 V | |
Technologie | Standard | |
Supplier Device Package | TO-252, (D-Pak) | |
Speed | Standard Recovery >500ns, > 200mA (Io) | |
Serie | - | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tube | |
Operatiounstemperatur - Junction | -40°C ~ 150°C | |
Mounting Type | Surface Mount | |
Aktuell - Reverse Leakage @ Vr | 50 µA @ 1600 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 8A | |
Capacitance @ Vr, F. | - | |
Basis Produktnummer | 8EWS16 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | VS-8EWS16S-M3 | VS-8EWS16STRPBF | VS-8EWS16STRR-M3 | VS-8EWS12STRLPBF |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Serie | - | - | FRED Pt® | - |
Capacitance @ Vr, F. | - | - | - | - |
Voltage - DC Reverse (Vr) (Max) | 1600 V | 1600 V | 1600 V | 1200 V |
Aktuell - Reverse Leakage @ Vr | 50 µA @ 1600 V | 50 µA @ 1600 V | 50 µA @ 1600 V | 50 µA @ 1200 V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Operatiounstemperatur - Junction | -40°C ~ 150°C | -40°C ~ 150°C | -40°C ~ 150°C | -55°C ~ 150°C |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 8A | 8A | 8A | 8A |
Supplier Device Package | TO-252, (D-Pak) | D-PAK (TO-252AA) | D-PAK (TO-252AA) | D-PAK (TO-252AA) |
Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
Technologie | Standard | Standard | Standard | Standard |
Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 8 A | 1.1 V @ 8 A | 1.1 V @ 8 A | 1.1 V @ 8 A |
Basis Produktnummer | 8EWS16 | 8EWS16 | 8EWS16 | 8EWS12 |
Eroflueden VS-8EWS16S-M3 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir VS-8EWS16S-M3 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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