VS-8EWF10S-M3 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - VS-8EWF10S-M3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - VS-8EWF10S-M3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 8 A | |
Voltage - DC Reverse (Vr) (Max) | 1000 V | |
Technologie | Standard | |
Supplier Device Package | D-PAK (TO-252AA) | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Reverse Recovery Time (trr) | 270 ns |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tube | |
Operatiounstemperatur - Junction | -40°C ~ 150°C | |
Mounting Type | Surface Mount | |
Aktuell - Reverse Leakage @ Vr | 100 µA @ 1000 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 8A | |
Capacitance @ Vr, F. | - | |
Basis Produktnummer | 8EWF10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division VS-8EWF10S-M3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | VS-8EWF10S-M3 | VS-8EWF12STRPBF | VS-8EWF02STR-M3 | VS-8EWH06FNTRLHM3 |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Serie | - | - | - | Automotive, AEC-Q101, FRED Pt® |
Voltage - DC Reverse (Vr) (Max) | 1000 V | 1200 V | 200 V | 600 V |
Aktuell - Reverse Leakage @ Vr | 100 µA @ 1000 V | 100 µA @ 1200 V | 100 µA @ 200 V | 50 µA @ 600 V |
Supplier Device Package | D-PAK (TO-252AA) | D-PAK (TO-252AA) | D-PAK (TO-252AA) | D-PAK (TO-252AA) |
Basis Produktnummer | 8EWF10 | 8EWF12 | 8EWF02 | 8EWH06 |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Capacitance @ Vr, F. | - | - | - | - |
Operatiounstemperatur - Junction | -40°C ~ 150°C | -40°C ~ 150°C | -40°C ~ 150°C | -65°C ~ 175°C |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 8A | 8A | 8A | 8A |
Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 8 A | 1.3 V @ 8 A | 1.2 V @ 8 A | 2.4 V @ 8 A |
Reverse Recovery Time (trr) | 270 ns | 270 ns | 55 ns | 25 ns |
Technologie | Standard | Standard | Standard | Standard |
Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Eroflueden VS-8EWF10S-M3 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir VS-8EWF10S-M3 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.