VS-4EWH02FNTR-M3 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - VS-4EWH02FNTR-M3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - VS-4EWH02FNTR-M3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 4 A | |
Voltage - DC Reverse (Vr) (Max) | 200 V | |
Technologie | Standard | |
Supplier Device Package | D-PAK (TO-252AA) | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | FRED Pt® | |
Reverse Recovery Time (trr) | 20 ns |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) | |
Operatiounstemperatur - Junction | -65°C ~ 175°C | |
Mounting Type | Surface Mount | |
Aktuell - Reverse Leakage @ Vr | 3 µA @ 200 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 4A | |
Capacitance @ Vr, F. | - | |
Basis Produktnummer | 4EWH02 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | VS-4EWH02FNTR-M3 | VS-45L40 | VS-45L60 | VS-500-KFF-GNN |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | VI |
Operatiounstemperatur - Junction | -65°C ~ 175°C | -40°C ~ 200°C | -40°C ~ 200°C | - |
Technologie | Standard | Standard | Standard | - |
Mounting Type | Surface Mount | Stud Mount | Stud Mount | - |
Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 4 A | 1.33 V @ 471 A | 1.33 V @ 471 A | - |
Voltage - DC Reverse (Vr) (Max) | 200 V | 400 V | 600 V | - |
Serie | FRED Pt® | - | - | - |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | - |
Reverse Recovery Time (trr) | 20 ns | - | - | - |
Basis Produktnummer | 4EWH02 | 45L40 | 45L60 | - |
Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | - |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 4A | 150A | 150A | - |
Capacitance @ Vr, F. | - | - | - | - |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | DO-205AC, DO-30, Stud | DO-205AC, DO-30, Stud | - |
Supplier Device Package | D-PAK (TO-252AA) | DO-205AC (DO-30) | DO-205AC (DO-30) | - |
Aktuell - Reverse Leakage @ Vr | 3 µA @ 200 V | - | - | - |
Eroflueden VS-4EWH02FNTR-M3 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir VS-4EWH02FNTR-M3 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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