VS-30WQ10FNTRR-M3 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - VS-30WQ10FNTRR-M3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - VS-30WQ10FNTRR-M3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 810 mV @ 3 A | |
Voltage - DC Reverse (Vr) (Max) | 100 V | |
Technologie | Schottky | |
Supplier Device Package | D-PAK (TO-252AA) | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tape & Reel (TR) | |
Operatiounstemperatur - Junction | -40°C ~ 150°C | |
Mounting Type | Surface Mount | |
Aktuell - Reverse Leakage @ Vr | 1 mA @ 100 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 3.5A | |
Capacitance @ Vr, F. | 92pF @ 5V, 1MHz | |
Basis Produktnummer | 30WQ10 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division VS-30WQ10FNTRR-M3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | VS-30WQ10FNTRR-M3 | VS-30WQ04FNTRPBF | VS-30WQ10FNTRLHM3 | VS-30WQ10FNHM3 |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Aktuell - Reverse Leakage @ Vr | 1 mA @ 100 V | 2 mA @ 40 V | 1 mA @ 100 V | 1 mA @ 100 V |
Technologie | Schottky | Schottky | Schottky | Schottky |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 3.5A | 3.5A | 3.5A | 3.5A |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
Basis Produktnummer | 30WQ10 | 30WQ04 | 30WQ10 | 30WQ10 |
Supplier Device Package | D-PAK (TO-252AA) | D-PAK (TO-252AA) | D-PAK (TO-252AA) | D-PAK (TO-252AA) |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Voltage - Viru (Vf) (Max) @ Wann | 810 mV @ 3 A | 530 mV @ 3 A | 810 mV @ 3 A | 810 mV @ 3 A |
Voltage - DC Reverse (Vr) (Max) | 100 V | 40 V | 100 V | 100 V |
Operatiounstemperatur - Junction | -40°C ~ 150°C | -40°C ~ 150°C | -40°C ~ 150°C | -40°C ~ 150°C |
Capacitance @ Vr, F. | 92pF @ 5V, 1MHz | 189pF @ 5V, 1MHz | 92pF @ 5V, 1MHz | 92pF @ 5V, 1MHz |
Serie | - | - | Automotive, AEC-Q101 | Automotive, AEC-Q101 |
Eroflueden VS-30WQ10FNTRR-M3 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir VS-30WQ10FNTRR-M3 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? ARA AAA A WED : Mir kontaktéieren Iech direkt.