VB20200G-E3/4W Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - VB20200G-E3/4W technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - VB20200G-E3/4W
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.7 V @ 10 A | |
Voltage - DC Reverse (Vr) (Max) | 200 V | |
Technologie | Schottky | |
Supplier Device Package | TO-263AB (D²PAK) | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | TMBS® | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tube | |
Operatiounstemperatur - Junction | -40°C ~ 150°C | |
Mounting Type | Surface Mount | |
Diode Configuration | 1 Pair Common Cathode | |
Aktuell - Reverse Leakage @ Vr | 150 µA @ 200 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 10A | |
Basis Produktnummer | VB20200 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division VB20200G-E3/4W.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | VB20200G-E3/4W | VB20150C-E3/8W | VB20M120C-E3/8W | VB20120C-E3/8W |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Voltage - DC Reverse (Vr) (Max) | 200 V | 150 V | 120 V | 120 V |
Serie | TMBS® | TMBS® | TMBS® | TMBS® |
Aktuell - Reverse Leakage @ Vr | 150 µA @ 200 V | 150 µA @ 150 V | 700 µA @ 120 V | 700 µA @ 120 V |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Supplier Device Package | TO-263AB (D²PAK) | TO-263AB (D²PAK) | TO-263AB (D²PAK) | TO-263AB (D²PAK) |
Operatiounstemperatur - Junction | -40°C ~ 150°C | -55°C ~ 150°C | -40°C ~ 150°C | -40°C ~ 150°C |
Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Voltage - Viru (Vf) (Max) @ Wann | 1.7 V @ 10 A | 1.2 V @ 10 A | 910 mV @ 10 A | 900 mV @ 10 A |
Technologie | Schottky | Schottky | Schottky | Schottky |
Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
Basis Produktnummer | VB20200 | VB20150 | VB20M120 | VB20120 |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 10A | 10A | 10A | 10A |
Eroflueden VB20200G-E3/4W PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir VB20200G-E3/4W - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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