VB10150C-E3/4W Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - VB10150C-E3/4W technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - VB10150C-E3/4W
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.41 V @ 5 A | |
Voltage - DC Reverse (Vr) (Max) | 150 V | |
Technologie | Schottky | |
Supplier Device Package | TO-263AB (D²PAK) | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | TMBS® | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tube | |
Operatiounstemperatur - Junction | -55°C ~ 150°C | |
Mounting Type | Surface Mount | |
Diode Configuration | 1 Pair Common Cathode | |
Aktuell - Reverse Leakage @ Vr | 100 µA @ 150 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 5A | |
Basis Produktnummer | VB10150 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division VB10150C-E3/4W.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | VB10150C-E3/4W | 12CTQ035STRL | MBR2035CT | STTH12010TV1 |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Diodes Incorporated | STMicroelectronics |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 5A | 6A | 20A | 60A |
Voltage - Viru (Vf) (Max) @ Wann | 1.41 V @ 5 A | 600 mV @ 6 A | 840 mV @ 20 A | 2 V @ 60 A |
Basis Produktnummer | VB10150 | 12CTQ | MBR2035CT | STTH12010 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | ISOTOP |
Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 2 Independent |
Technologie | Schottky | Schottky | Schottky | Standard |
Voltage - DC Reverse (Vr) (Max) | 150 V | 35 V | 35 V | 1000 V |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Package protegéieren | Tube | Tape & Reel (TR) | Tube | Tube |
Serie | TMBS® | - | - | - |
Supplier Device Package | TO-263AB (D²PAK) | TO-263AB (D²PAK) | TO-220-3 | ISOTOP® |
Aktuell - Reverse Leakage @ Vr | 100 µA @ 150 V | 800 µA @ 35 V | 100 µA @ 35 V | 20 µA @ 1000 V |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Chassis Mount |
Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 175°C | -55°C ~ 150°C | 150°C (Max) |
Eroflueden VB10150C-E3/4W PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir VB10150C-E3/4W - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.