US1MHE3_A/I Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - US1MHE3_A/I technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - US1MHE3_A/I
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.7 V @ 1 A | |
Voltage - DC Reverse (Vr) (Max) | 1000 V | |
Technologie | Standard | |
Supplier Device Package | DO-214AC (SMA) | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | Automotive, AEC-Q101 | |
Reverse Recovery Time (trr) | 75 ns |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | DO-214AC, SMA | |
Package protegéieren | Tape & Reel (TR) | |
Operatiounstemperatur - Junction | -55°C ~ 150°C | |
Mounting Type | Surface Mount | |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 1000 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
Capacitance @ Vr, F. | 10pF @ 4V, 1MHz | |
Basis Produktnummer | US1M |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division US1MHE3_A/I.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | US1MHE3_A/I | US1MHE3_A/H | US1MHE3/61T | US1ME-TP |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Micro Commercial Co |
Reverse Recovery Time (trr) | 75 ns | 75 ns | 75 ns | 75 ns |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 1000 V | 10 µA @ 1000 V | 10 µA @ 1000 V | 10 µA @ 1000 V |
Serie | Automotive, AEC-Q101 | Automotive, AEC-Q101 | - | - |
Voltage - DC Reverse (Vr) (Max) | 1000 V | 1000 V | 1000 V | 1000 V |
Supplier Device Package | DO-214AC (SMA) | DO-214AC (SMA) | DO-214AC (SMA) | SMAE |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Capacitance @ Vr, F. | 10pF @ 4V, 1MHz | 10pF @ 4V, 1MHz | 10pF @ 4V, 1MHz | 17pF @ 4V, 1MHz |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 1A |
Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -65°C ~ 175°C |
Technologie | Standard | Standard | Standard | Standard |
Package / Case | DO-214AC, SMA | DO-214AC, SMA | DO-214AC, SMA | DO-214AC, SMA |
Basis Produktnummer | US1M | US1 | US1 | US1M |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Voltage - Viru (Vf) (Max) @ Wann | 1.7 V @ 1 A | 1.7 V @ 1 A | 1.7 V @ 1 A | 1.7 V @ 1 A |
Eroflueden US1MHE3_A/I PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir US1MHE3_A/I - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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