UGF8HCT-E3/45 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - UGF8HCT-E3/45 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - UGF8HCT-E3/45
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.75 V @ 4 A | |
Voltage - DC Reverse (Vr) (Max) | 500 V | |
Technologie | Standard | |
Supplier Device Package | ITO-220AB | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Reverse Recovery Time (trr) | 50 ns |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | TO-220-3 Full Pack, Isolated Tab | |
Package protegéieren | Tube | |
Operatiounstemperatur - Junction | -55°C ~ 150°C | |
Mounting Type | Through Hole | |
Diode Configuration | 1 Pair Common Cathode | |
Aktuell - Reverse Leakage @ Vr | 30 µA @ 500 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 4A | |
Basis Produktnummer | UGF8 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | UGF8HCT-E3/45 | UGF2008G | UGF8JCT-E3/45 | UGF2006G |
Hiersteller | Vishay General Semiconductor - Diodes Division | Taiwan Semiconductor Corporation | Vishay General Semiconductor - Diodes Division | Taiwan Semiconductor Corporation |
Voltage - DC Reverse (Vr) (Max) | 500 V | 600 V | 600 V | 400 V |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 4A | 20A | 4A | 20A |
Technologie | Standard | Standard | Standard | Standard |
Voltage - Viru (Vf) (Max) @ Wann | 1.75 V @ 4 A | 1.7 V @ 10 A | 1.75 V @ 4 A | 1.25 V @ 10 A |
Serie | - | - | - | - |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
Aktuell - Reverse Leakage @ Vr | 30 µA @ 500 V | 5 µA @ 600 V | 30 µA @ 600 V | 5 µA @ 400 V |
Basis Produktnummer | UGF8 | UGF2008 | UGF8 | UGF2006 |
Package / Case | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package protegéieren | Tube | Tube | Tube | Tube |
Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 175°C |
Supplier Device Package | ITO-220AB | ITO-220AB | ITO-220AB | ITO-220AB |
Reverse Recovery Time (trr) | 50 ns | 25 ns | 50 ns | 20 ns |
Eroflueden UGF8HCT-E3/45 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir UGF8HCT-E3/45 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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