SS3H10HE3/57T Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - SS3H10HE3/57T technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - SS3H10HE3/57T
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 800 mV @ 3 A | |
Voltage - DC Reverse (Vr) (Max) | 100 V | |
Technologie | Schottky | |
Supplier Device Package | DO-214AB (SMC) | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | Automotive, AEC-Q101 | |
Package / Case | DO-214AB, SMC |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tape & Reel (TR) | |
Operatiounstemperatur - Junction | -65°C ~ 175°C | |
Mounting Type | Surface Mount | |
Aktuell - Reverse Leakage @ Vr | 20 µA @ 100 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
Capacitance @ Vr, F. | - | |
Basis Produktnummer | SS3H10 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SS3H10HE3/57T | SS39 R7 | SS3H10-E3/57T | SS3H10HE3_B/H |
Hiersteller | Vishay General Semiconductor - Diodes Division | Taiwan Semiconductor Corporation | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Capacitance @ Vr, F. | - | - | - | - |
Serie | Automotive, AEC-Q101 | - | - | Automotive, AEC-Q101 |
Voltage - DC Reverse (Vr) (Max) | 100 V | 90 V | 100 V | 100 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Operatiounstemperatur - Junction | -65°C ~ 175°C | -55°C ~ 150°C | -65°C ~ 175°C | -65°C ~ 175°C |
Technologie | Schottky | Schottky | Schottky | Schottky |
Basis Produktnummer | SS3H10 | - | SS3H10 | SS3H10 |
Voltage - Viru (Vf) (Max) @ Wann | 800 mV @ 3 A | 850 mV @ 3 A | 800 mV @ 3 A | 800 mV @ 3 A |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Supplier Device Package | DO-214AB (SMC) | DO-214AB (SMC) | DO-214AB (SMC) | DO-214AB (SMC) |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 3A | 3A |
Aktuell - Reverse Leakage @ Vr | 20 µA @ 100 V | 100 µA @ 90 V | 20 µA @ 100 V | 20 µA @ 100 V |
Package / Case | DO-214AB, SMC | DO-214AB, SMC | DO-214AB, SMC | DO-214AB, SMC |
Eroflueden SS3H10HE3/57T PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir SS3H10HE3/57T - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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