SS2H10-E3/52T Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - SS2H10-E3/52T technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - SS2H10-E3/52T
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 790 mV @ 2 A | |
Voltage - DC Reverse (Vr) (Max) | 100 V | |
Technologie | Schottky | |
Supplier Device Package | DO-214AA (SMB) | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Package / Case | DO-214AA, SMB |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tape & Reel (TR) | |
Operatiounstemperatur - Junction | -65°C ~ 175°C | |
Mounting Type | Surface Mount | |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 100 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 2A | |
Capacitance @ Vr, F. | - | |
Basis Produktnummer | SS2H10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division SS2H10-E3/52T.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SS2H10-E3/52T | SS2FH10-M3/H | SS2H10-E3/5BT | SS2H10HE3_A/H |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Basis Produktnummer | SS2H10 | SS2FH10 | SS2H10 | SS2H10 |
Technologie | Schottky | Schottky | Schottky | Schottky |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Voltage - Viru (Vf) (Max) @ Wann | 790 mV @ 2 A | 860 mV @ 2 A | 790 mV @ 2 A | 790 mV @ 2 A |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 2A | 2A | 2A | 2A |
Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 100 V | 100 V |
Operatiounstemperatur - Junction | -65°C ~ 175°C | -55°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 100 V | 5 µA @ 10 V | 10 µA @ 100 V | 10 µA @ 100 V |
Capacitance @ Vr, F. | - | 70pF @ 4V, 1MHz | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Serie | - | eSMP® | - | Automotive, AEC-Q101 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Supplier Device Package | DO-214AA (SMB) | DO-219AB (SMF) | DO-214AA (SMB) | DO-214AA (SMB) |
Package / Case | DO-214AA, SMB | DO-219AB | DO-214AA, SMB | DO-214AA, SMB |
Eroflueden SS2H10-E3/52T PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir SS2H10-E3/52T - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.