S4PK-M3/86A Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - S4PK-M3/86A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - S4PK-M3/86A
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 4 A | |
Voltage - DC Reverse (Vr) (Max) | 800 V | |
Technologie | Standard | |
Supplier Device Package | TO-277A (SMPC) | |
Speed | Standard Recovery >500ns, > 200mA (Io) | |
Serie | eSMP® | |
Reverse Recovery Time (trr) | 2.5 µs |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | TO-277, 3-PowerDFN | |
Package protegéieren | Tape & Reel (TR) | |
Operatiounstemperatur - Junction | -55°C ~ 150°C | |
Mounting Type | Surface Mount | |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 800 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 4A | |
Capacitance @ Vr, F. | 30pF @ 4V, 1MHz | |
Basis Produktnummer | S4P |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | S4PK-M3/86A | S4PB-M3/86A | S4PBHM3/86A | BYG21K-E3/TR |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Technologie | Standard | Standard | Standard | Avalanche |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
Voltage - DC Reverse (Vr) (Max) | 800 V | 100 V | 100 V | 800 V |
Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 4 A | 1.1 V @ 4 A | 1.1 V @ 4 A | 1.6 V @ 1.5 A |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 4A | 4A | 4A | 1.5A |
Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Package / Case | TO-277, 3-PowerDFN | TO-277, 3-PowerDFN | TO-277, 3-PowerDFN | DO-214AC, SMA |
Capacitance @ Vr, F. | 30pF @ 4V, 1MHz | 30pF @ 4V, 1MHz | 30pF @ 4V, 1MHz | - |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 800 V | 10 µA @ 100 V | 10 µA @ 100 V | 1 µA @ 800 V |
Basis Produktnummer | S4P | S4P | S4P | BYG21 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Supplier Device Package | TO-277A (SMPC) | TO-277A (SMPC) | TO-277A (SMPC) | DO-214AC (SMA) |
Reverse Recovery Time (trr) | 2.5 µs | 2.5 µs | 2.5 µs | 120 ns |
Serie | eSMP® | eSMP® | eSMP® | - |
Eroflueden S4PK-M3/86A PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir S4PK-M3/86A - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
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Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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