S3GHE3/57T Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - S3GHE3/57T technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - S3GHE3/57T
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.15 V @ 2.5 A | |
Voltage - DC Reverse (Vr) (Max) | 400 V | |
Technologie | Standard | |
Supplier Device Package | DO-214AB (SMC) | |
Speed | Standard Recovery >500ns, > 200mA (Io) | |
Serie | Automotive, AEC-Q101 | |
Reverse Recovery Time (trr) | 2.5 µs |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | DO-214AB, SMC | |
Package protegéieren | Tape & Reel (TR) | |
Operatiounstemperatur - Junction | -55°C ~ 150°C | |
Mounting Type | Surface Mount | |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 400 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
Capacitance @ Vr, F. | 60pF @ 4V, 1MHz | |
Basis Produktnummer | S3G |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | S3GHE3/57T | S3G-E3/57T | S3G-E3/9AT | S3GHE3/9AT |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 3A | 3A |
Voltage - Viru (Vf) (Max) @ Wann | 1.15 V @ 2.5 A | 1.15 V @ 2.5 A | 1.15 V @ 2.5 A | 1.15 V @ 2.5 A |
Technologie | Standard | Standard | Standard | Standard |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 400 V | 10 µA @ 400 V | 10 µA @ 400 V | 10 µA @ 400 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Capacitance @ Vr, F. | 60pF @ 4V, 1MHz | 60pF @ 4V, 1MHz | 60pF @ 4V, 1MHz | 60pF @ 4V, 1MHz |
Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
Package / Case | DO-214AB, SMC | DO-214AB, SMC | DO-214AB, SMC | DO-214AB, SMC |
Supplier Device Package | DO-214AB (SMC) | DO-214AB (SMC) | DO-214AB (SMC) | DO-214AB (SMC) |
Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Reverse Recovery Time (trr) | 2.5 µs | 2.5 µs | 2.5 µs | 2.5 µs |
Serie | Automotive, AEC-Q101 | - | - | Automotive, AEC-Q101 |
Voltage - DC Reverse (Vr) (Max) | 400 V | 400 V | 400 V | 400 V |
Basis Produktnummer | S3G | S3G | S3G | S3G |
Eroflueden S3GHE3/57T PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir S3GHE3/57T - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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