RS07G-M-08 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - RS07G-M-08 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - RS07G-M-08
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay General Semiconductor – Diodes Division | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.15 V @ 700 mA | |
| Voltage - DC Reverse (Vr) (Max) | 400 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-219AB (SMF) | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | Automotive, AEC-Q101 | |
| Reverse Recovery Time (trr) | 150 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-219AB | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 400 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 500mA | |
| Capacitance @ Vr, F. | 9pF @ 4V, 1MHz | |
| Basis Produktnummer | RS07 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division RS07G-M-08.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | RS07G-M-08 | RS07J-GS08 | RS07G-GS08 | RS07J-M-08 |
| Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
| Reverse Recovery Time (trr) | 150 ns | 250 ns | 150 ns | 250 ns |
| Voltage - DC Reverse (Vr) (Max) | 400 V | 600 V | 400 V | 600 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Voltage - Viru (Vf) (Max) @ Wann | 1.15 V @ 700 mA | 1.15 V @ 700 mA | 1.15 V @ 700 mA | 1.15 V @ 700 mA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
| Supplier Device Package | DO-219AB (SMF) | DO-219AB (SMF) | DO-219AB (SMF) | DO-219AB (SMF) |
| Package / Case | DO-219AB | DO-219AB | DO-219AB | DO-219AB |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 400 V | 10 µA @ 600 V | 10 µA @ 400 V | 10 µA @ 600 V |
| Basis Produktnummer | RS07 | RS07 | RS07 | RS07 |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Capacitance @ Vr, F. | 9pF @ 4V, 1MHz | 9pF @ 4V, 1MHz | 9pF @ 4V, 1MHz | 9pF @ 4V, 1MHz |
| Serie | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 |
| Technologie | Standard | Standard | Standard | Standard |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 500mA | 500mA | 500mA | 500mA |
Eroflueden RS07G-M-08 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir RS07G-M-08 - Vishay General Semiconductor - Diodes Division.
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RS07K-M3P-08Electro-Films (EFI) / VishayRS07D-M-08Vishay General Semiconductor - Diodes DivisionDIODE GP 200V 500MA DO219ABRS07D-GS08Vishay General Semiconductor - Diodes DivisionDIODE GP 200V 500MA DO219ABRS07K-GS08Vishay General Semiconductor - Diodes DivisionDIODE GP 800V 500MA DO219ABRS07K-M-08Vishay General Semiconductor - Diodes DivisionDIODE GP 800V 500MA DO219ABRS06K102FT| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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