RMB4S-E3/80 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - RMB4S-E3/80 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - RMB4S-E3/80
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Peak Reverse (Max) | 400 V | |
Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 400 mA | |
Technologie | Standard | |
Supplier Device Package | TO-269AA (MBS) | |
Serie | - | |
Package / Case | TO-269AA, 4-BESOP |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tape & Reel (TR) | |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Diode Type | Single Phase | |
Aktuell - Reverse Leakage @ Vr | 5 µA @ 400 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 500 mA | |
Basis Produktnummer | RMB4 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RMB4S-E3/80 | VUO36-16NO8 | SBR2A40BLP-13 | GBPC12005 |
Hiersteller | Vishay General Semiconductor - Diodes Division | IXYS | Diodes Incorporated | onsemi |
Basis Produktnummer | RMB4 | VUO36 | SBR2A40 | GBPC12 |
Supplier Device Package | TO-269AA (MBS) | FO-B | V-DFN5060-4 | GBPC |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 500 mA | 27 A | 2 A | 12 A |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Voltage - Peak Reverse (Max) | 400 V | 1.6 kV | 40 V | 50 V |
Serie | - | - | Automotive, AEC-Q101, SBR® | - |
Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 400 mA | 1.04 V @ 15 A | 500 mV @ 2 A | 1.1 V @ 6 A |
Mounting Type | Surface Mount | QC Terminal | Surface Mount | QC Terminal |
Technologie | Standard | Standard | Super Barrier | Standard |
Package protegéieren | Tape & Reel (TR) | Box | Tape & Reel (TR) | Bulk |
Package / Case | TO-269AA, 4-BESOP | 5-Square, FO-B | 4-VDFN | 4-Square, GBPC |
Diode Type | Single Phase | Three Phase | Single Phase | Single Phase |
Aktuell - Reverse Leakage @ Vr | 5 µA @ 400 V | 40 µA @ 1600 V | 100 µA @ 40 V | 5 µA @ 50 V |
Eroflueden RMB4S-E3/80 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir RMB4S-E3/80 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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