MSS1P6HM3_A/H Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - MSS1P6HM3_A/H technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - MSS1P6HM3_A/H
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 680 mV @ 1 A | |
Voltage - DC Reverse (Vr) (Max) | 60 V | |
Technologie | Schottky | |
Supplier Device Package | MicroSMP (DO-219AD) | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | Automotive, AEC-Q101 | |
Package / Case | MicroSMP |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tape & Reel (TR) | |
Operatiounstemperatur - Junction | -55°C ~ 150°C | |
Mounting Type | Surface Mount | |
Aktuell - Reverse Leakage @ Vr | 150 µA @ 60 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
Capacitance @ Vr, F. | 40pF @ 4V, 1MHz | |
Basis Produktnummer | MSS1P6 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division MSS1P6HM3_A/H.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | MSS1P6HM3_A/H | MSS1P6HM3/89A | MSS1P4HM3/89A | MSS2P2-M3/89A |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Voltage - DC Reverse (Vr) (Max) | 60 V | 60 V | 40 V | 20 V |
Basis Produktnummer | MSS1P6 | MSS1P6 | MSS1P4 | MSS2P2 |
Serie | Automotive, AEC-Q101 | Automotive, AEC-Q101, eSMP® | Automotive, AEC-Q101, eSMP® | eSMP® |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 2A |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Aktuell - Reverse Leakage @ Vr | 150 µA @ 60 V | 150 µA @ 60 V | 200 µA @ 40 V | 250 µA @ 20 V |
Technologie | Schottky | Schottky | Schottky | Schottky |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Package / Case | MicroSMP | MicroSMP | MicroSMP | MicroSMP |
Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
Capacitance @ Vr, F. | 40pF @ 4V, 1MHz | 40pF @ 4V, 1MHz | 50pF @ 4V, 1MHz | 65pF @ 4V, 1MHz |
Voltage - Viru (Vf) (Max) @ Wann | 680 mV @ 1 A | 680 mV @ 1 A | 550 mV @ 1 A | 600 mV @ 2 A |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Supplier Device Package | MicroSMP (DO-219AD) | MicroSMP (DO-219AD) | MicroSMP (DO-219AD) | MicroSMP (DO-219AD) |
Eroflueden MSS1P6HM3_A/H PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir MSS1P6HM3_A/H - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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