MBRB15H45CT-E3/81 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - MBRB15H45CT-E3/81 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - MBRB15H45CT-E3/81
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 630 mV @ 7.5 A | |
Voltage - DC Reverse (Vr) (Max) | 45 V | |
Technologie | Schottky | |
Supplier Device Package | TO-263AB (D²PAK) | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tape & Reel (TR) | |
Operatiounstemperatur - Junction | -65°C ~ 175°C | |
Mounting Type | Surface Mount | |
Diode Configuration | 1 Pair Common Cathode | |
Aktuell - Reverse Leakage @ Vr | 50 µA @ 45 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 7.5A | |
Basis Produktnummer | MBRB15 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division MBRB15H45CT-E3/81.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | MBRB15H45CT-E3/81 | MBRB15H60CT-E3/45 | MBRB1560CT-E3/45 | MBRB1545CTTRL |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Voltage - DC Reverse (Vr) (Max) | 45 V | 60 V | 60 V | 45 V |
Technologie | Schottky | Schottky | Schottky | Schottky |
Package protegéieren | Tape & Reel (TR) | Tube | Tube | Tape & Reel (TR) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Voltage - Viru (Vf) (Max) @ Wann | 630 mV @ 7.5 A | 730 mV @ 7.5 A | 750 mV @ 7.5 A | 840 mV @ 7.5 A |
Operatiounstemperatur - Junction | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 150°C | -65°C ~ 150°C |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Basis Produktnummer | MBRB15 | MBRB15 | MBRB1560 | MBRB15 |
Aktuell - Reverse Leakage @ Vr | 50 µA @ 45 V | 50 µA @ 60 V | 1 mA @ 60 V | 100 µA @ 45 V |
Supplier Device Package | TO-263AB (D²PAK) | TO-263AB (D²PAK) | TO-263AB (D²PAK) | TO-263AB (D²PAK) |
Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 7.5A | 7.5A | 7.5A | 7.5A |
Serie | - | - | - | - |
Eroflueden MBRB15H45CT-E3/81 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir MBRB15H45CT-E3/81 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
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Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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