FES16JT-E3/45 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - FES16JT-E3/45 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - FES16JT-E3/45
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 16 A | |
Voltage - DC Reverse (Vr) (Max) | 600 V | |
Technologie | Standard | |
Supplier Device Package | TO-220AC | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Reverse Recovery Time (trr) | 50 ns |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | TO-220-2 | |
Package protegéieren | Tube | |
Operatiounstemperatur - Junction | -65°C ~ 150°C | |
Mounting Type | Through Hole | |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 16A | |
Capacitance @ Vr, F. | - | |
Basis Produktnummer | FES16 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FES16JT-E3/45 | FES16HT | FES16JT | FES16GT-E3/45 |
Hiersteller | Vishay General Semiconductor - Diodes Division | Fairchild Semiconductor | Fairchild Semiconductor | Vishay General Semiconductor - Diodes Division |
Supplier Device Package | TO-220AC | TO-220-2 | TO-220-2 | TO-220AC |
Voltage - DC Reverse (Vr) (Max) | 600 V | 500 V | 600 V | 400 V |
Technologie | Standard | Standard | Standard | Standard |
Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 16 A | 1.5 V @ 8 A | 1.5 V @ 8 A | 1.3 V @ 16 A |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | 10 µA @ 500 V | 10 µA @ 600 V | 10 µA @ 400 V |
Package / Case | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 |
Package protegéieren | Tube | Tube | Tube | Tube |
Serie | - | - | - | - |
Capacitance @ Vr, F. | - | 145pF @ 4V, 1MHz | 145pF @ 4V, 1MHz | - |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Basis Produktnummer | FES16 | - | - | FES16 |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Reverse Recovery Time (trr) | 50 ns | 50 ns | 50 ns | 50 ns |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 16A | 16A | 16A | 16A |
Operatiounstemperatur - Junction | -65°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C |
Eroflueden FES16JT-E3/45 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir FES16JT-E3/45 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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