BZX85C9V1-TAP Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - BZX85C9V1-TAP technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - BZX85C9V1-TAP
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Zener (nom) (Vz) | 9.1 V | |
Toleranz | ±5% | |
Supplier Device Package | DO-204AL (DO-41) | |
Serie | Automotive, AEC-Q101, BZX85 | |
Power - Max | 1.3 W | |
Package / Case | DO-204AL, DO-41, Axial |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Cut Tape (CT) | |
Operatioun Temperatur | -55°C ~ 175°C | |
Mounting Type | Through Hole | |
Impedanz (Max) (Zzt) | 5 Ohms | |
Aktuell - Reverse Leakage @ Vr | 1 µA @ 6.8 V | |
Basis Produktnummer | BZX85C9V1 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division BZX85C9V1-TAP.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BZX85C9V1-TAP | BZX85C7V5 | BZX85C7V5 | BZX884-B18,315 |
Hiersteller | Vishay General Semiconductor - Diodes Division | Taiwan Semiconductor Corporation | Fairchild Semiconductor | Nexperia USA Inc. |
Operatioun Temperatur | -55°C ~ 175°C | -65°C ~ 200°C (TJ) | - | -65°C ~ 150°C |
Supplier Device Package | DO-204AL (DO-41) | DO-204AL (DO-41) | DO-41G | DFN1006-2 |
Voltage - Zener (nom) (Vz) | 9.1 V | 7.5 V | 7.5 V | 18 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount |
Package / Case | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | SOD-882 |
Basis Produktnummer | BZX85C9V1 | BZX85 | BZX85C7 | BZX884-B18 |
Aktuell - Reverse Leakage @ Vr | 1 µA @ 6.8 V | 1 µA @ 4.5 V | 1 µA @ 4.5 V | 50 nA @ 12.6 V |
Toleranz | ±5% | ±5% | ±5% | ±2% |
Package protegéieren | Cut Tape (CT) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
Impedanz (Max) (Zzt) | 5 Ohms | 3 Ohms | 3 Ohms | 45 Ohms |
Serie | Automotive, AEC-Q101, BZX85 | - | - | Automotive, AEC-Q100 |
Power - Max | 1.3 W | 1.3 W | 1.3 W | 250 mW |
Eroflueden BZX85C9V1-TAP PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir BZX85C9V1-TAP - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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