BZT55C3V3-GS08 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - BZT55C3V3-GS08 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - BZT55C3V3-GS08
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Zener (nom) (Vz) | 3.3 V | |
Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 200 mA | |
Toleranz | ±5% | |
Supplier Device Package | SOD-80 QuadroMELF | |
Serie | Automotive, AEC-Q101, BZT55 | |
Power - Max | 500 mW |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | SOD-80 Variant | |
Package protegéieren | Tape & Reel (TR) | |
Operatioun Temperatur | -65°C ~ 175°C | |
Mounting Type | Surface Mount | |
Impedanz (Max) (Zzt) | 90 Ohms | |
Aktuell - Reverse Leakage @ Vr | 2 µA @ 1 V | |
Basis Produktnummer | BZT55C3V3 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BZT55C3V3-GS08 | BZT55C2V7-GS08 | BZT55C33-GS08 | BZT55C43-GS08 |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Power - Max | 500 mW | 500 mW | 500 mW | 500 mW |
Package / Case | SOD-80 Variant | SOD-80 Variant | SOD-80 Variant | SOD-80 Variant |
Voltage - Zener (nom) (Vz) | 3.3 V | 2.7 V | 33 V | 43 V |
Supplier Device Package | SOD-80 QuadroMELF | SOD-80 QuadroMELF | SOD-80 QuadroMELF | SOD-80 QuadroMELF |
Impedanz (Max) (Zzt) | 90 Ohms | 85 Ohms | 80 Ohms | 600 Ohms |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 200 mA | 1.5 V @ 200 mA | 1.5 V @ 200 mA | 1.5 V @ 200 mA |
Toleranz | ±5% | ±5% | ±5% | - |
Basis Produktnummer | BZT55C3V3 | BZT55C2V7 | BZT55C33 | BZT55C43 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Aktuell - Reverse Leakage @ Vr | 2 µA @ 1 V | 10 µA @ 1 V | 100 nA @ 24 V | 100 nA @ 33 V |
Operatioun Temperatur | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | - |
Serie | Automotive, AEC-Q101, BZT55 | Automotive, AEC-Q101, BZT55 | Automotive, AEC-Q101, BZT55 | Automotive, AEC-Q101, BZT55 |
Eroflueden BZT55C3V3-GS08 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir BZT55C3V3-GS08 - Vishay General Semiconductor - Diodes Division.
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DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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