BYV28-100-TAP Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - BYV28-100-TAP technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - BYV28-100-TAP
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 5 A | |
Voltage - DC Reverse (Vr) (Max) | 100 V | |
Technologie | Avalanche | |
Supplier Device Package | SOD-64 | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Reverse Recovery Time (trr) | 30 ns |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | SOD-64, Axial | |
Package protegéieren | Cut Tape (CT) | |
Operatiounstemperatur - Junction | -55°C ~ 175°C | |
Mounting Type | Through Hole | |
Aktuell - Reverse Leakage @ Vr | 1 µA @ 100 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 3.5A | |
Capacitance @ Vr, F. | - | |
Basis Produktnummer | BYV28 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division BYV28-100-TAP.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BYV28-100-TAP | BYV27-200-TAP | BYV28-150-TAP | BYV27-600-TAP |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Supplier Device Package | SOD-64 | SOD-57 | SOD-64 | SOD-57 |
Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 5 A | 1.07 V @ 3 A | 1.1 V @ 5 A | 1.35 V @ 3 A |
Package / Case | SOD-64, Axial | SOD-57, Axial | SOD-64, Axial | SOD-57, Axial |
Capacitance @ Vr, F. | - | - | - | - |
Package protegéieren | Cut Tape (CT) | Cut Tape (CT) | Cut Tape (CT) | Cut Tape (CT) |
Technologie | Avalanche | Avalanche | Avalanche | Avalanche |
Operatiounstemperatur - Junction | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
Aktuell - Reverse Leakage @ Vr | 1 µA @ 100 V | 1 µA @ 200 V | 1 µA @ 150 V | 5 µA @ 600 V |
Basis Produktnummer | BYV28 | BYV27 | BYV28 | BYV27 |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 3.5A | 2A | 3.5A | 2A |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Serie | - | - | - | - |
Reverse Recovery Time (trr) | 30 ns | 25 ns | 30 ns | 250 ns |
Voltage - DC Reverse (Vr) (Max) | 100 V | 200 V | 150 V | 600 V |
Eroflueden BYV28-100-TAP PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir BYV28-100-TAP - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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